The capacitive thickness meter ST-3525 measures silicon, semi-conductor wafers, or other metal disks etc. using a non-contact method, and the measured value is displayed in digital. Also, the measured value is outputted in analog or digital. The high precision measurement can be performed on the table, and measured with various processes.

Features

	The thickness of semiconductor wafer or metals can be measured.
	Measurements are performed using non-contact and non-destructive methods.
	The thickness is read directly. High resolution is 0.1mm.
	Various processes can be combined.

Performance

Type of measurement Non contact and capacitive Objects being tested Silicon wafers, semiconductor wafers, metal plates, and hard disks Measuring range 250mm to 750mm (changeable) It can be changed to 999.9mm (max.). However, the measuring range is fixed (500mm). Accuracy range Less than ±100mm to a standard sample Distance between probes A, B 1mm (with thickness t500mm, standard sample) Accuracy Less than ±1mm (Less than 23 ±2°C, less than 55 ±10% R.H) When there is not much dust and vibration, and when using a wafer measurement stand. Resolution 0.1mm Thickness formula Thickness t=C-(A+B) Display 4 digits, unit mm, Max. 999.9 Display cycle Internal triggering: Approximately 2.5 times/second, available external triggering Output Analog : 10mV/mm Digital: BCD parallel (positive logic TTL level) Comparator: GO, HI, LO (relay contact) Other functions Comparator, the calibration of measuring value, peak to peak value measurement Operation environment Temperature: 0 to 50°C Relative humidity: Less than 85% R.H Power source AC100 ±10V, 50/60Hz Power consumption Approximately 25W Dimensions/Weights Main unit: Approximately 220W x 160H x 305L (mm)/ Approximately 6kg Probe: Φ16 x 90 (mm) (Electrode dimension Φ5.5mm) Accessories ST-0505 probe(2), Power cord(1), Instruction manual(1)

Usage

Before using, calibrate it with master that has same condition as samples. The probe must be fixed to eliminate mechanical variation. Size of the metal stand must be large enough for the wafer, and its surface must be flat.